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为了描述生长在弛豫Si1-xGex层上应变Sin型金属氧化物半导体场效应晶体管(nMOSFETs)反型层中电子迁移率的增强机理,提出了一种新型的、基于物理的电子迁移率模型.该模型不仅能够反映声学声子散射迁移率、表面粗糙度散射迁移率与垂直于半导体-绝缘体界面的电场强度之间的依赖关系,而且也能解释不同的锗组分对两种散射机理的抑制情况从而引起电子迁移率增强的机理.该模型数学表达式简单,可以模拟任意锗组分下的迁移率.通过数值分析验证得出,该模型与已报道的实验数据结果相符合.同时该模型能够被嵌入到ISE模拟器中,获得与原模拟器内置模型相一致的结果.
In order to describe the enhancement mechanism of electron mobility in the inversion layer of strained Sin-type MOSFETs grown on relaxed Si1-xGex layers, a new type of physical-based electron mobility model was proposed. The model can not only reflect the dependence of the acoustic phonon scattering mobility, the surface roughness scattering mobility and the electric field strength perpendicular to the semiconductor-insulator interface, but also explain the inhibition of the two scattering mechanisms by different germanium components Which leads to the mechanism of enhanced electron mobility. The mathematical expression of the model is simple and can simulate the mobility of any germanium component. The numerical analysis shows that the model is consistent with the reported experimental data. Meanwhile, Can be embedded into the ISE simulator to obtain results consistent with the original simulator built-in model.