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提出了水辅助激光诱导等离子体背部刻蚀Pyrex7740玻璃的方法,制备了缩小型十字通道微流控芯片。通过理论分析和加工试验,研究了激光能量密度和激光加工次数对平均刻蚀深度的影响,以及刻蚀过程中去离子水的作用。研究结果表明,平均刻蚀深度与激光能量密度和激光加工次数有较大关系;去离子水有助于实现持续刻蚀,制得的芯片沟槽宽度为77.8μm,刻蚀深度为20.4μm,刻蚀边缘齐整,无明显崩边现象;而在没有去离子水辅助的情况下,当激光能量密度为3.4J/cm~2时,最大刻蚀深度为2.8μm。
A water-assisted laser-induced plasma back-etching method of Pyrex7740 glass was proposed and a miniaturized cross-channel microfluidic chip was fabricated. The effects of laser energy density and laser processing times on the average etching depth and the effect of deionized water during the etching process were studied through theoretical analysis and processing experiments. The results show that the average depth of etching has a great relationship with the laser energy density and the number of laser processing. Deionized water helps to achieve continuous etching. The width of the groove is 77.8μm, the etching depth is 20.4μm, The edge of the etching is neat, and there is no obvious chipping. In the absence of deionized water, the maximum etching depth is 2.8μm when the laser energy density is 3.4J / cm ~ 2.