论文部分内容阅读
利用分子束外延薄膜生长技术,制备了200V/4Fe/900V/MgO(100)薄膜样品,通过X射线反射和极化中子反射两种测量手段获得了薄膜的表面、界面及各层膜厚的相关结构信息.中子反射结果表明,Fe原子磁矩在室温下约为1.0±0.1μB,随着温度的降低,Fe原子磁矩增加,在10K时达到1.5±0.1μB.利用指数定律拟合磁矩随温度的变化情况,外推得出4铁薄膜样品的居里温度约为310±30K.
The film samples of 200V / 4Fe / 900V / MgO (100) were prepared by molecular beam epitaxy film growth technique. The surface and interface of the films were obtained by X-ray reflection and polarized neutron reflection measurements And the related structural information of the film thickness.The results of neutron reflection show that the magnetic moment of Fe atom is about 1.0 ± 0.1μB at room temperature and the magnetic moment of Fe atom increases with the decrease of temperature and reaches 1.5 ± 0.1μB Using the exponential law fitting the change of magnetic moment with temperature, the Curie temperature of 4 iron thin film samples is about 310 ± 30K.