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本文报导首次用自制的分子束外延(MBE)炉生长GaAs单晶薄膜的初步工艺实验。用一个喷射炉装GaAs多晶作As源,另一个喷射炉装Ga作Ga源。把GaAs(100)衬底腐蚀、清洗后置于衬底台上,调节喷射炉的温度使分子束强度比(As_2)/()Ga为5～10左右,其衬底保持在适当温度时进行外延生长。从电子衍射的花样和外延层厚度等测试结果表明:使用MBE成功地生长出了GaAs单晶薄膜。
This paper reports the first experimental study on the growth of GaAs single crystal thin films by a self-made molecular beam epitaxy (MBE) furnace. GaAs polycrystalline as a source with a jet furnace, and Ga as a Ga source for another jet furnace. The GaAs (100) substrate is etched, cleaned and placed on a substrate stage. The temperature of the blast furnace is adjusted so that the molecular beam intensity ratio (As 2) / (Ga) is about 5 to 10 and the substrate is maintained at an appropriate temperature Epitaxial growth. The results from the electron diffraction pattern and the epitaxial layer thickness show that the GaAs single crystal thin film has been successfully grown using MBE.