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通过控制制备工艺条件和充电参数，利用相应条件下样品的等温表面电位衰减，开路热刺激放电电流谱等，考察了利用溶胶－凝胶（ｓｏｌ－ｇｅｌ）方法制备的Ｓｉ基多孔ＳｉＯ２薄膜的驻极体性能，分析了各种工艺参数与薄膜驻极体性质之间的联系，同时利用Ｇａｕｓｓ拟合及初始上升法对薄膜驻极体的电有陷阱深度进行了估算．实验结果表明，反应物中水的含量对薄膜驻极体的陷阱分布具有调节作用；估算出负电晕充电ＳｉＯ２薄膜驻极体电荷的活化能为０．３ｅＶ和１．０ｅＶ；环境湿度对电荷储存稳定性有一定的影响，降低栅压可以提高ＳｉＯ２薄膜驻极体的电荷储存稳定性．
The preparation of Si-based porous SiO2 thin films by sol-gel method was investigated by controlling the preparation conditions and charging parameters, the isothermal surface potential decay of the samples under the corresponding conditions, the open circuit current stimulated discharge current, etc. The relationship between the process parameters and the electret properties was analyzed. The trapped depth of the electret was estimated by Gauss fitting and initial rising method. The experimental results show that the content of water in the reactant has an effect on the trap distribution of the film electret. The activation energies of charge of negative corona-charged SiO2 film are estimated to be 0.3eV and 1.0eV. The influence of ambient humidity on charge storage Stability has a certain impact, reducing the gate voltage can increase the SiO2 film electret charge storage stability.