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针对光伏型中波HgCdTe双色红外探测器作了优化模拟计算,器件采用典型n-p-p-p-n结构和同时工作模式,建立的二维模型考虑了辐射复合、俄歇复合和Shockley-Read-Hall(SRH)复合三种复合机理,以及深能级辅助隧穿和带间直接隧穿效应,载流子穿过阻挡层势垒的隧道效应采用传递矩阵法计算.分析了双色器件光谱响应随吸收区SRH复合少子(电子)寿命的变化关系,以及串音与阻挡层组分的关系.模拟结果显示,随吸收区少子寿命变短,量子效率迅速下降;为了使器件有较高的量子效率,HgCdTe材料的SRH复合电子寿命应该至少在10ns以上.随阻挡层组分增大,势垒增高,串音迅速减小,大约在阻挡层组分差为0.03时下降到光学串音决定的稳定值,得出了抑制电学串音,阻挡层组分差的临界值为0.03.
In order to optimize the simulation of photovoltaic HgCdTe two-color infrared detector, the device adopts the typical npppn structure and simultaneous mode. The established two-dimensional model considers the radiation recombination, Auger recombination and Shockley-Read-Hall (SRH) The tunneling effect of carrier through the barrier barrier is calculated by using the transfer matrix method.The spectral response of the two-color device with the SRH recombination minority Electron), and the relationship between the crosstalk and the barrier composition.The simulation results show that with the short life of the absorbing region, the quantum efficiency decreases rapidly; in order to make the device have higher quantum efficiency, the SRH recombination of HgCdTe material The electron lifetime should be at least 10 ns or above. As the barrier composition increases, the barrier increases and the crosstalk decreases rapidly, reaching a steady value determined by the optical crosstalk approximately at a barrier component difference of 0.03, yielding a suppression Electrical crosstalk, barrier layer component of the critical value of 0.03.