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在基于绝缘体上硅(SOI)材料的IC器件及MEMS器件研发过程中,薄膜应力引起的晶圆变形、膜层脱落等工艺问题,制约了其研发进度和器件性能。对键合SOI材料整体残余应力展开研究,推出埋氧层、背面氧化层、衬底厚度与SOI整体残余应力的关系,并采用翘曲度值表征由残余应力引起的SOI形变的大小,弯曲度的正负表征SOI形变的方向。针对IC和MEMS产品在开发过程中因残余应力过大而引起的光刻无法吸片、牺牲层释放不干净等问题,通过工艺优化,制备出与残余应力方向相反、应力大小适中的SOI片,从而抵消了部分残余应力,翘曲度由200μm以上下降到100μm以内,有效解决了工艺异常问题。
During the research and development of IC devices and MEMS devices based on silicon on insulator (SOI) materials, process problems such as wafer deformation caused by film stress and film peeling off, which restrict the progress of R & D and device performance. The whole residual stress of the bonded SOI material is studied. The relationship between the buried oxide layer, the back oxide layer, the substrate thickness and the residual stress of SOI is introduced. The warpage value is used to characterize the SOI deformation caused by residual stress, The sign of positive and negative SOI deformation direction. Aiming at the problem that the IC and MEMS products can not be suctioned due to the residual stress caused by excessive residual stress and the release of the sacrificial layer is not clean during the development of the IC and MEMS products, SOI sheets with moderate stress in opposite directions to residual stress are prepared through process optimization. Thus offsetting part of the residual stress, warpage from 200μm or more down to 100μm or less, effectively solve the problem of abnormal process.