基于一种新型的稠合噻吩-吡咯并吡咯二酮聚合物半导体(PTDPPTFT4),采用溶液法工艺制作了高性能环保型、空穴型有机薄膜晶体管。通过尝试不同的半导体层退火温度及退火时间,优化了有机薄膜晶体管的性能。当采用对二甲苯溶剂,退火温度为190℃,退火时间为60min时,迁移率为2.1cm2·V-1·s-1,电流开关比大于106。通过X射线掠入射角衍射法测试,得到高温退火后聚合物薄膜的结构特点,进而揭示了退火条件改变后,薄膜晶体管拥有高迁移率的原因。 Based on a new type of fused thiophene-diketopyrrolopyrrole polymer semiconductors (PTDPPTFT4), a high-performance, environment-friendly and hole-type organic thin film transistor was fabricated by solution process. The performance of the organic thin film transistor is optimized by experimenting with different annealing temperatures and annealing times of the semiconductor layer. When using p-xylene solvent, the annealing temperature is 190 ℃ and the annealing time is 60min, the mobility is 2.1cm2 · V-1 · s-1, and the current switching ratio is more than 106. By X-ray grazing incidence diffraction test, the structural characteristics of the polymer film after high-temperature annealing were obtained, and then the reasons for the high mobility of the thin film transistor after the annealing condition was changed were revealed.