利用Hel光电子发射,在以[110]为轴的Si圆柱面上研究了悬键表面态与晶向的关系.实验发现:在高指数晶面上,来自表面态的光电子发射有不同程度的增强,而谱峰的FWHM反而减小.其解释是,除了悬挂键的数目增加外,台阶Si原子的sp~3杂化轨道上的电荷重新分布,使其更加局域在悬键的方向上.这与最近表面电偶极子的研究结果[文献7]定性一致. Using Hel photoelectron emission, the relationship between the dangling surface states and the crystal orientation was studied on Si cylindrical [110] axis. The experimental results show that the photoelectron emission from the surface states is enhanced to some extent on high index crystal planes , While the FWHM of the peak decreases but the explanation is that in addition to the increase in the number of dangling bonds, the redistribution of charges on the sp ~ 3 hybrid orbital Si atoms makes them more localized in the dangling direction. This is qualitatively consistent with the findings of the recent surface dipole [7].