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在前期对GaAs微波单片集成电路负阻压控带通有源滤波器进行理论及实验研究的基础上 ,针对国内工艺技术的特点 ,提出了提高其性能的电路结构及其设计技术 .该设计采用宽带放大器级联负阻压控带通有源滤波器 ,在输入端设计π型宽带匹配电路 ,并采用经实验验证和优化设计的平面压控变容管 .模拟结果表明 ,该压控带通滤波器性能优越 ,有 1 0dB以上插入增益 ,通带宽度约 30MHz ,调频范围宽约 4 0 0MHz ,工作于 1 .4 4～ 1 .82GHz.
Based on the theoretical and experimental research on the negative resistance and voltage-controlled band-pass active filter of GaAs microwave monolithic integrated circuit in the early stage, the circuit structure and its design technique to improve its performance are proposed according to the characteristics of domestic technology. A broadband amplifier cascode negative-tone voltage-controlled band-pass active filter is adopted, a π-type broadband matching circuit is designed on the input side, and an experimentally verified and optimized planar voltage-controlled varactor is designed.The simulation results show that the voltage- Pass filter superior performance, with more than 10dB insertion gain, the passband width of about 30MHz, FM range of about 400MHz, working at 14.4 ~ 1.82GHz.