中国科学院上海微系统与信息技术研究所在层数可控石墨烯薄膜制备方面取得新进展。研究人员设计了Ni/Cu体系,并利用离子注入技术引入碳源,通过精确控制注入碳的剂量,成功实现了对石墨烯层数的调控。研究人员围绕石墨烯层数的控制问题,结合Ni和Cu在化学气相沉积(CVD)法中制备石墨烯 Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences has made new progress in the preparation of graphene sheets with controlled layer numbers. The researchers designed a Ni / Cu system and introduced a carbon source using ion implantation. By precisely controlling the dose of carbon implanted, the graphene layers were successfully controlled. Researchers focus on the control of graphene layers, combined with Ni and Cu in the chemical vapor deposition (CVD) method for the preparation of graphene