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用电子束蒸发方法在硅上淀积一薄层Ti膜后,经750℃、10秒的真空快速热退火即可形成难熔金属硅化物TiSi_2.通过扫描电镜、俄歇能谱和PN结反向电流的检测,证实其对硅的接触性能较铝对硅的优越.由圆性传输线模型外推法测得TiSi_2对N~+-Si的接触电阻率要比Al对N~+-Si的低一个量级.这使 TiSi_2作为 LSI、VLSI中互连线的新材料,在缩小器件尺寸和改善亚微米N沟器件性能方面是大有前途的.
After deposition of a thin film of Ti on silicon by electron beam evaporation, TiSi 2 can be formed by rapid thermal annealing in vacuum at 750 ℃ for 10 seconds. By scanning electron microscopy, Auger spectrum and PN junctions The results show that the contact resistance of silicon to Si is superior to that of Al to Si. The contact resistivity of TiSi_2 to N ~ + -Si is better than that of Al to N ~ + -Si by extrapolation of circular transmission line model Which is one order of magnitude lower.This makes TiSi_2 a promising new material for interconnects in LSIs and VLSIs and is promising in reducing device size and improving submicron N-channel device performance.