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考虑应变,在有效质量、有限高势垒近似下,变分研究了纤锌矿GaN/Al_xGa_(1-x)N柱形量子点中类氢施主杂质态结合能随流体静压力、杂质位置及量子点结构参数(量子点高度、半径、Al含量)的变化关系.结果表明,类氢施主杂质态结合能随流体静压力增大而增大,且在量子点尺寸较小时,流体静压力对杂质态结合能的影响更为显著.受流体静压力的影响,杂质态结合能随量子点高度、半径的增加而单调减少,且变化趋势加剧;随A1含量增加而增大的趋势变缓.无论是否施加流体静压力,随着类氢施主杂质从量子点左界面沿材料生长方向移至右界面,杂质态结合能在量子点的右半部分存在一极大值.流体静压力使得极大值点向量子点中心偏移.
Considering the strain, the binding energies of H-donor impurity states in the wurtzite GaN / Al x Ga 1-x N N quantum dots are studied with the variation of hydrostatic pressure, impurity position, (Quantum dot height, radius, Al content). The results show that the binding energies of the H-like donors increase with the increase of the hydrostatic pressure, and when the size of the quantum dots is small, the hydrostatic pressure The effect of impurity energy is more obvious.Under hydrostatic pressure, the binding energies of impurity states monotonically decrease with the increase of quantum dot height and radius, and the trend of change is exacerbated. With the increase of A1 content, the increase tends to slow down. Regardless of whether hydrostatic pressure is applied or not, as the hydrogen-like donor impurity moves from the left interface of the quantum dots to the right interface along the material growth direction, there is a maximum in the right half of the quantum dot for the impurity state binding energy. Value Point The center of the sub-vector of the vector.