,Experimental Research on Carrier Redistribution in InAs/GaAs Quantum Dots

来源 :中国物理快报(英文版) | 被引量 : 0次 | 上传用户:beakerzhou
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In order to investigate the carrier redistribution mechanisms in InAs/GaAs self-assembled quantum dots,the photoluminescent energy peak shift is studied with increasing excitation power.Unusually for samples of relatively low density,it is shown that the energy peak position could recover slowly after a fast redshift,associated with the increasing excitation power.A theoretical model is presented,which involves the Auger effect assisting carrier recapture as important mechanisms during the relaxation process.
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