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多种重金属的氧化物,经高温煅烧后,均可呈现电子性半导体的性质,其电导随温度急剧变化,故可作测量温度之用,通常称热感电阻。从电导的对数与温度的倒数的图中,可以推算半导体电导性所需的电子能位差。本文试验氧化物混入玻璃粉制成的小珠,用半导体体内电热法制成热感电阻,在常温时的电阻值为10~4—10~5欧姆,在500℃时只有10—100欧姆。半导体与铂导体线间的电性接触,经实验推知是良好的。这种制备方法,在实验室里,非常简易。经多次试验,以混合锰、钴、镍的氧化物和玻璃粉制成的电导性较大,有实用价值。
A variety of heavy metal oxides, after calcination at high temperatures, can show the nature of electronic semiconductors, the conductivity changes rapidly with temperature, it can be used to measure the temperature, usually called thermal resistance. From the logarithm of conductivity and the reciprocal of temperature, one can calculate the electron potential difference required for semiconductor conductivity. In this paper, we test the oxide beads mixed with glass powder, made by the semiconductor body thermistor thermoelectric resistance, resistance at room temperature when the 10 ~ 4-10 ~ 5 ohms at 500 ℃ only 10-100 ohms. Electrical contact between the semiconductor and the platinum conductor lines, the experimental extrapolation is good. This preparation method, in the laboratory, is very simple. After many tests to mix manganese, cobalt, nickel oxide and glass powder made of larger conductivity, practical.