论文部分内容阅读
本文主要介绍了用微波等离子体化学气相沉积法(以下简称MP CVD法)以甲醇-氢气混合气和丙酮-氢气混合气为源气体,分别以单晶硅的(111)面和人造金刚石的(100)面为衬底材料,制备出了面积为20mm×20mm厚为10μm的多晶金刚石膜和面积为1.0mm×1.0mm厚为5μm的单晶金刚石膜。通过试验发现,源气体配比和衬底温度对薄膜质量起决定性作用。另外,衬底在反应腔中的位置对薄膜的生成也有很大影响。单晶金刚石膜制备过程中衬底金刚石的晶体取向与金刚石薄膜的生长及质量有密切的关系。在金刚石的(100),(110)和(111)面上分别获得了单晶金刚石膜和金刚石多晶粒子。选用扫描电镜、显微激光拉曼、反射电子衍射对多晶金刚石膜及单晶金刚石膜的性能进行了测试。
In this paper, the microwave plasma chemical vapor deposition (hereinafter referred to as MP CVD method) with methanol - hydrogen gas mixture and acetone - hydrogen gas as the source gas, respectively, single crystal silicon (111) and artificial diamond ( 100) surface, a polycrystalline diamond film having an area of 20 mm × 20 mm and a thickness of 10 μm and a monocrystalline diamond film having an area of 1.0 mm × 1.0 mm and a thickness of 5 μm were prepared. Through the experiment found that the source gas ratio and the substrate temperature on the film quality plays a decisive role. In addition, the position of the substrate in the reaction chamber also has a great influence on the film formation. The crystal orientation of the substrate diamond during the preparation of single crystal diamond film is closely related to the growth and quality of the diamond thin film. Single crystal diamond films and diamond polycrystalline particles were obtained on the (100), (110) and (111) planes of diamond, respectively. The properties of polycrystalline diamond film and single crystal diamond film were tested by scanning electron microscopy, laser Raman microscopy and reflection electron diffraction.