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本文把环境温度梯度作为一个变量引入LEC法生长的理论模型中进行分析,得到了晶体中温度分布的表达式.利用该式建立了不同环境温度梯度下晶体中切应力与位错密度的关系.以LEC法生长InP单晶为例的计算结果表明:降低环境温度梯度有助于减少晶体中的位错密度.
In this paper, the temperature gradient of the environment is taken as a variable to introduce into the theoretical model of LEC growth, and the expression of the temperature distribution in the crystal is obtained.The relationship between the shear stress and the dislocation density in the crystal under different ambient temperature gradient is established. The calculation of the growth of InP single crystal by LEC shows that decreasing the ambient temperature gradient helps to reduce the dislocation density in the crystal.