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作者在我国大陆首次实现了GaN基垂直腔面发射激光器(VCSEL)的激射.首先采用金属有机物化学气相沉积(MOCVD)技术在蓝宝石衬底上进行高质量氮化物增益区的外延生长,然后在表面沉积高反射介质膜分布布拉格反射镜(DBR).将样品键合到其它支撑片上后,采用激光剥离技术将蓝宝石衬底去除.再在去除蓝宝石后露出的氮化物表面沉积第二组介质膜DBR制成VCSEL.在室温光泵条件下,观察到VCSEL的激射,激射波长449.5 nm,阈值6.5 mJ/cm2,激射峰的半高宽小于0.1 nm,这些指标达到了国际领先水平.本文为进一步研制实用化氮化物VCSEL奠定了重要的基础.
The authors first realized the lasing of a GaN-based VCSEL in mainland China.Firstly, high-quality nitride gain region was epitaxially grown on a sapphire substrate by metal organic chemical vapor deposition (MOCVD) Surface deposition of high-reflection dielectric film distribution Bragg reflector (DBR). After the sample is bonded to the other support sheet, the use of laser stripping technology to remove the sapphire substrate. And then remove the sapphire exposed nitride surface deposition of a second group of dielectric film DBR made of VCSEL.Under the optical pumping conditions at room temperature, the VCSEL lasing was observed, with a lasing wavelength of 449.5 nm and a threshold of 6.5 mJ / cm 2 and a full width at half maximum (FWHM) of lasing peak of less than 0.1 nm. These indexes have reached the international advanced level. This article has laid an important foundation for the further development of practical VCSEL nitride.