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扫描电子显微镜(SEM)广泛地利用于半导体表面局部电位的测定,电学功能试验和大规模集成电路失效分析。本项工作首先叙述电子束与集成电路的相互作用,二次放射机理和电压衬度的测量原理。本文讨论了各种电压衬度法,也叙述了一种新的电压衬度法,称它为电子束感生电压衬度法。这种方法对具有钝化层表面的集成电路的性能测量具有重要意义。本文讨论了电子束感生电压衬度的原理,给出了获得表面电位分布信息的各种分析方法和谱仪的结构。关于PMOS和CMOS失效分析的扫描电镜研究表明,该方法对于大规模集成电路失效分析是一种很有价值的分析技术。
Scanning electron microscopy (SEM) is widely used in the determination of the local potential of semiconductor surfaces, electrical functional tests and large scale integrated circuit failure analysis. This work first describes the interaction between the electron beam and the integrated circuit, secondary emission mechanism and voltage contrast measurement principle. This article discusses a variety of voltage contrast methods, but also describes a new voltage contrast method, called electron beam induced voltage contrast method. This method is of great importance to the performance measurement of integrated circuits with a passivation layer surface. In this paper, the principle of electron beam induced voltage contrast is discussed. Various analytical methods to obtain the surface potential distribution information and the structure of the spectrometer are given. Scanning electron microscopy studies on PMOS and CMOS failure analysis show that this method is a valuable analytical technique for large scale integrated circuit failure analysis.