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ＳｉＧｅ 合金具有较高的载流子迁移率与较低的结晶温度， 比Ｓｉ 更适合用作薄膜晶体管（ ＴＦＴ） 。最近，我们已证实，利用Ａｌ２Ｏ３ 作多晶ＳｉＧｅ ＴＦＴ的门绝缘子，可使界面得到显著改善。虽然已经证明，由Ｓｉ 缓冲层的高温氧化形成的ＳｉＯ２ 可改善界面质量，但是还不清楚在ＳｉＧｅ 有源层与Ａｌ２Ｏ３ 门电介质之间插入一α＿Ｓｉ 缓冲层能否进一步提高界面的质量。在本研究中，对于有、无α＿Ｓｉ 缓冲层的多晶ＳｉＧｅ ＴＦＴ 的性能作了比较
SiGe alloy has higher carrier mobility and lower crystallization temperature, which is more suitable for thin film transistor (TFT) than Si. Recently, we have demonstrated that the use of Al2O3 as a gate insulator for polycrystalline SiGe TFTs results in a significant improvement in the interface. Although it has been demonstrated that SiO2 formed by the high temperature oxidation of a Si buffer improves interface quality, it is unclear whether inserting an a-Si buffer layer between the SiGe active layer and the Al2O3 gate dielectric can further improve the quality of the interface. In this study, the performance of polycrystalline SiGe TFTs with and without α_Si buffer layers was compared