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通过电学、光学和深能级瞬态谱(DLTS)的测量,研究了硅中“氢-缺陷络合物”施主的行为.测得了同氢有关的三个能级:E_c-0.026eV、E_c-0.037eV,E_c-0.265eV.证实该施主中心的产生,跟材料中硅氢键以及某种结构正在研究的特定缺陷的存在密切相关.还通过多方面实验证实,它同已知的“450℃退火形成的氧施主”完全不同.最后指出,利用在氢气中区熔生长的NTD硅来研究孤立氢原子在硅中的行为,比用其他方法更为有利.这为氢在硅中的电活性提供了新的证据.
The behavior of donors of “hydrogen-defect complex” in silicon was investigated by the measurement of electrical, optical and deep level transient spectra (DLTS). Three hydrogen related levels were measured: E_c-0.026eV, E_c -0.037eV, and E_c-0.265eV. It was confirmed that the donor center was closely related to the existence of specific defects in the silicon-hydrogen bond in the material and a structure under study. It was also confirmed by various experiments that it was similar to the known "450 Finally, it is pointed out that it is more advantageous to study the behavior of isolated hydrogen atoms in silicon using NTD silicon grown by zone melting in hydrogen, which is more advantageous than other methods. Activity provides new evidence.