采用离子注入法制作新型晶体管日本ＮＴＴ公司采用像写字那样在衬底上注入离子的方法制成新的器件。所开发的新器件是一种沟道层和栅层由相同材料组成，并具有内平面（ｆ＞７卜＞）栅结构的晶体管。由于衬底靠近绝缘体，电子在成为直线的沟道层中能够自由来往，而处在两侧... New transistor made by ion implantation NTT Corp. of Japan made a new device by implanting ions on the substrate like writing. The new device developed is a transistor with a channel structure in which the channel and gate layers are made of the same material and have an in-plane (f> 7) gate structure. Since the substrate is close to the insulator, the electrons are free to travel in and out of the straight channel layer, and are on both sides ...