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本文简要地叙述减压CVD技术的基本理论,着重介绍该技术应用于半导体器件加工掺硼、磷和砷氧化物源,二氧化硅薄膜,四氯化硅—氨—氮系统淀积氮化硅薄膜以及热分解硅烷淀积多晶硅薄膜等工艺技术问题。提供了各类薄膜制作时采用的典型工艺数据(仅供参考)。对薄膜厚度的均匀性,掺杂层浓度控制与均匀性及薄膜表面状况等进行了分析讨论。由理论分析和实验结果看出,减压CVD技术制作的半导体器件中应用的各类薄膜最突出的优点是:薄膜厚度的均匀性高(可达1～3％),实现了高密度装片(生产量可达10厘米温区内可装40片)。因而,减压CVD技术在目前大规模集成电路、微波半导体器件中是一种十分值得重视的工艺技术。
This article briefly describes the basic theory of vacuum CVD technology, highlighting the technology used in semiconductor devices processing boron, phosphorus and arsenic oxide source, silicon dioxide film, silicon tetrachloride - ammonia - nitrogen deposition of silicon nitride Film and thermal decomposition of silane deposition polycrystalline silicon film and other technical problems. Provides a variety of film production process using the typical data (for reference only). The uniformity of the film thickness, the control and uniformity of the doped layer concentration and the surface condition of the film were analyzed and discussed. The theoretical analysis and experimental results show that the most prominent advantages of various types of films used in semiconductor devices fabricated by the reduced-pressure CVD technique are high film thickness uniformity (up to 1 to 3%), high density mounting (Production up to 10 cm in the temperature zone can hold 40). Therefore, the vacuum CVD technology in the current large-scale integrated circuits, microwave semiconductor devices is a very worthy of attention to process technology.