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针对目前SRAM存储单元所面临的α粒子注入引起的软错误问题,首先采用一个简化的反相器模型,模拟其在α粒子注入时的输出变化;然后将该输出用作SRAM存储单元电路仿真的输入信号,研究α粒子注入对存储单元双稳电路稳定性的影响,其中,α粒子的注入通过一个电流源来模拟;最后,比较两种电流源模型下存储单元的存储情况。可以看出,pMOS等效电阻越大或节点电容越小,α粒子的注入越容易导致存储单元软错误的发生。也就是说,临界电荷越小,发生软错误的可能性越大。
Aiming at the soft error caused by α-particle injection in SRAM cell, a simplified inverter model is first used to simulate the output change when α-particle is injected. Then, the output is used as the SRAM memory cell circuit simulation The influence of α particle injection on the stability of the bistable memory cell is studied. The injection of α particle is simulated by a current source. Finally, the memory conditions of the two current sources are compared. It can be seen that the larger the pMOS equivalent resistance or the smaller the node capacitance, the easier the injection of α particles will result in a soft error of the memory cell. In other words, the smaller the critical charge, the greater the likelihood of a soft error.