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The capacitance versus DC-voltage formula from electron trapping at dopant impurity centers is derived for MOS capacitors by the charge-storage method.Fermi-Dirac distribution and impurity deionization are included in the DC-voltage scale.The low-frequency and high-frequency capacitances,and their differences and derivatives,are computed in the presence of an unlimited source of minority and majority carriers.The results show that their difference and their DC-voltage derivatives,are large and readily measurable,hence suitable as a method for characterizing the electronic trapping parameters at dopant impurity centers and for a number of lower power signal processing and device technology monitoring applications.
The capacitance versus DC-voltage formula from electron trapping at dopant impurity centers is derived for MOS capacitors by the charge-storage method. Fermi-Dirac distribution and impurity deionization are included in the DC-voltage scale. The low-frequency and high-frequency capacitances, and their differences and derivatives, are computed in the presence of an unlimited source of minority and majority carriers. results show that their difference and their dc-voltage derivatives, are large and readily measurable, hence suitable as a method for characterizing the electronic trapping parameters at dopant impurity centers and for a number of lower power signal processing and device technology monitoring applications.