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从研究半导体PN结器件烧毁物理机理出发，建立了一种高效通用的半导体PN结器件计算机分析模型，并编制了一维德态程序，瞬态程序及二维模型研究将随后开展。
Starting from the study of the physical mechanism of semiconductor PN junction device burnout, a computer analysis model of semiconductor PN junction device with high efficiency and generality is established. One-dimensional German state program is prepared. The transient program and two-dimensional model research will be carried out later.