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前言在集成电路中应用了各种金属膜,例如:导体中主要是采用Al(铝)蒸发膜,另外,在一部分导体中也使用Au膜和高熔点金属的复合膜。而且Au的复合膜可以应用在梁式引线里。除此之外,在自对准MOS晶体管的栅电极里采用的是Mo膜或W膜。在集成电路工序中对于这些金属膜必须作出图形来,该方法大多采用照相蚀刻法,是在整个金属膜形成后进行的。在此想从电化学角度出发对金属膜的蚀刻进行展望。
Preface Various types of metal films are used in integrated circuits. For example, Al (aluminum) evaporation films are mainly used for the conductors, and composite films of Au films and refractory metals are also used in a part of the conductors. And Au composite film can be used in the beam lead. In addition, a Mo film or a W film is used in the gate electrode of a self-aligned MOS transistor. It is necessary to make a pattern for these metal films in the integrated circuit process, which is mostly done by photolithography, after the entire metal film has been formed. Here, the etching of the metal film is expected from the electrochemical point of view.