论文部分内容阅读
本文报道用光声谱法在近红外波段研究硅单晶中~(31)P~+离子注入效应,得到了注入剂量为10~(12)cm~(-2)-10~(15)cm~(-2)范围内的光声信号幅值随注入剂量变化的关系.对于先经退火后进行离子注入的样品,其剂量低到 5×10~(11)cm~(-2)的离子注入效应也能被检测到.在1×10~(12)-5 × 10~(13)cm~(-2)低剂量范围内,光声信号明显地随注入剂量而增加.因此,光声谱法是研究离子注入造成的晶格损伤的有效手段,有希望发展成为硅中离子注入剂量的无接触、快速、非破坏性的测量方法.
In this paper, the effect of ~ (31) P ~ + ion implantation in silicon single crystal was investigated by using photoacoustic spectroscopy in the near infrared region. The results show that the implantation dose is 10 ~ (12) cm ~ (-2) ~ (-2), the variation of the photoacoustic signal amplitude with the injected dose.For the sample that has been annealed and then ion implanted, the dose of ions is as low as 5 × 10 ~ (11) cm ~ (-2) The injection effect can also be detected.In the low dose range of 1 × 10 ~ (12) -5 × 10 ~ (13) cm ~ (-2), the photoacoustic signal obviously increases with the injected dose.Therefore, photoacoustic Spectral method is an effective method to study the lattice damage caused by ion implantation. It is hopeful to develop into a non-contact, rapid and non-destructive measurement method of ion implantation dose in silicon.