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采用强TEA CO_2脉冲激光辐照SiH_4/H_2系统,对SiH_4激光等离子体淀积硅膜进行了研究,测量了膜淀积及膜性能随淀积条件的变化关系.同时采用光学发射光谱、光声激光偏转方法对其基本的微观和宏观动力学过程进行了研究,在此基础上初步建立了膜淀积的物理模型,计算了膜淀积速率、膜面积等,结果与实验符合得较好.
The SiH 4 / H 2 system was irradiated by a strong TEA CO 2 pulsed laser to deposit the silicon film by SiH 4 laser plasma deposition, and the relationship between the film deposition and film properties was also investigated. The optical emission spectrum, photoacoustic Laser deflection method is used to study its basic microscopic and macroscopic kinetic processes. Based on this, a physical model of film deposition is established and the deposition rate and membrane area are calculated. The results are in good agreement with the experiment.