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中国科学院微电子所集成电路先导工艺研发中心是国家科技重大专项22纳米先导工艺项目的主要承担单位。中心自建立之日起就紧密围绕国家集成电路产业技术发展的需求,开展以器件小型化为基础的CMOS先导工艺研发。中心拥有一条完整的8英寸研发线,采用工业级设备,并在多个关键模块上拥有特色工艺能力。在光刻模块,采用电子束光刻(E-beam lithography)技术可实现22纳
Institute of Microelectronics, Chinese Academy of Sciences pilot process of IC R & D center is a major national science and technology major project 22-nanometer pilot process the main commitment unit. Since its founding, the center has been closely involved in the development of national IC industry technology and has started the research and development of CMOS process based on the miniaturization of devices. The center has a complete 8-inch research and development line, using industrial equipment, and a number of key modules have the characteristics of process capability. In photolithography modules, 22 nm can be achieved using E-beam lithography