论文部分内容阅读
为了详细研充心脏内腔机理,作者已研制成功装在双腔心导管顶端的新型心内传感器。心内传感器的结构心内传感器的结构如图1所示。敏感元件为两片半导体应变片,分别粘贴在直径为2.0mm圆膜片的内外侧。两片应变片和导管外的两个电阻组成惠斯顿电桥。应变片的阻值约为300Ω,应变系数在20℃时为98,应变片尺寸为长0.8mm,宽0.2mm,厚0.1mm。传感器能同时测量脉搏压和心内心音。平均灵敏度约-150dB(0dB=1V/μbar),频率特性在0到2KHz是平坦的。
In order to study the mechanism of the heart cavity in detail, the authors have developed a new type of intracardiac sensor that has been successfully mounted on the top of a dual-lumen cardiac catheter. The structure of the heart sensor The structure of the heart sensor as shown in Figure 1. Sensitive components for the two semiconductor strain gauges were pasted on the inside and outside diameter of 2.0mm round sheet. Two pieces of strain gauge and two resistance outside the catheter form the Wheatstone bridge. The strain gauge has a resistance of about 300 Ω, a strain factor of 98 at 20 ° C, a strain gage length of 0.8 mm, a width of 0.2 mm and a thickness of 0.1 mm. The sensor measures pulse pressure and heart sounds at the same time. The average sensitivity is about -150 dB (0 dB = 1 V / μbar) and the frequency characteristics are flat at 0 to 2 kHz.