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设计了一组测试结构用来探讨狗骨(dogbone)结构有源区对n-MOSFET性能的影响因素。测试结构和测量数据基于40 nm工艺技术,通过改变狗骨结构有源区的通孔区域到栅极之间的长度(S)来分析对NMOS器件参数如漏端饱和电流、阈值电压和漏电流的影响。实验表明,随着长度S从0.07μm增加到5.02μm,漏端饱和电流和漏电流均先上升后下降,而阈值电压呈单调下降变化趋势。漏端饱和电流和漏电流的趋势表明,狗骨结构有源区主要受到两个因素影响,即沿沟道长度方向的STI应力效应和源极/漏极电阻效应,而源极/漏极电阻效应对S较大的狗骨结构有源区影响更为显著。
A set of test structures was designed to investigate the influence of dogbone active area on n-MOSFET performance. Test Structure and Measurement Data Based on a 40 nm process technique, the NMOS device parameters such as drain saturation current, threshold voltage and leakage current are analyzed by changing the length (S) between the through-hole region of the dog bone active region and the gate Impact. Experiments show that as the length S increases from 0.07μm to 5.02μm, both the saturation current and the leakage current of the drain terminal first increase and then decrease, while the threshold voltage decreases monotonically. The trend of drain saturation current and drain current shows that the active region of dog bone structure is mainly affected by two factors, namely, the STI stress effect along the length of the channel and the source / drain resistance effect, while the source / drain resistance Effect on S larger dog bone structure active area more significant impact.