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提出了用阵列电容来监测氧化层的完整性。分析表明，从多个子列的氧化层电容漏电合格率的曲线可以求出氧化层完整性的表征因子 Ｅ 值（每个缺陷包含的单元数）。
The use of array capacitors is proposed to monitor the integrity of the oxide layer. The analysis shows that the characterization of the oxide integrity E (the number of cells included in each defect) can be obtained from the curve of the oxide leakage capacitance of multiple sub-columns.