比较了ＳｏｌＧｅｌ工艺制备ＰＺＴ薄膜的两种热处理过程成膜情况和对ＰＺＴ／Ｓｉ结构的影响，其中，低温烘烤、快速升温、高温退火的热处理方式有利于钙钛矿相成相．但是ＰＺＴ薄膜完成全过程退火后难以进行图形加工．对含有ＳｉＯ２的Ｓｉ衬底上的情况分析表明ＳｉＯ２有改善界面特性的作用 The formation of PZT films by SolGel process and the effect on the PZT / Si structure were compared. Among them, the heat treatment methods of low temperature baking, rapid heating and high temperature annealing were beneficial to the perovskite phase. However, the PZT film is difficult to carry out after the entire process of annealing graphics processing. Analysis on the Si substrate containing SiO2 shows that SiO2 has an effect of improving the interface characteristics