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采用ＬＰ－ＭＯＣＶＤ制作了ＩｎＧａＡｓ／ＩｎＰ平面型ＰＩＮ光电二极管。器件光敏面直径为７５μｍ，采用Ｚｎ扩散形成ＰＮ结，－６Ｖ偏置下其暗电流低达８～１３ｎＡ；反向击穿电压为６０Ｖ（１μＡ）。在没有增透膜时，对１．３μｍ注入光响应度为０．５６Ａ／Ｗ，光谱响应范围为０．９０～１．７０μｍ。
InGaAs / InP planar PIN photodiodes were fabricated by LP-MOCVD. The device has a photosensitive surface with a diameter of 75μm and a PN junction formed by diffusion of Zn. Its dark current is as low as 8 ~ 13nA at -6V bias and 60V (1μA) reverse breakdown voltage. In the absence of anti-reflective coating, the response to 1.3 μm implanted light is 0.56 A / W and the spectral response range is from 0.90 to 1.70 μm.