We demonstrate high-performance In_(0.23) Ga_(0.77) As channel metal-oxide-semiconductor Seld-effect transistors(MOSFETs) with high on-current to off-current(I_
We improve the performance of organic light-emitting diodes(OLEDs) with both a MoO_3 hole injection layer(HIL) and a MoO_3 doped hole transport layer(HTL),and p
A tunable plasmonic perfect absorber with a tuning range of ~650 nm is realized by introducing a 20 nm thick phase-change material Ge_2Sb_2Te_5 layer into the m
The effect of oxygen partial pressure(Po_2) during the channel layer deposition on bias stability of amorphous indium-gallium-zinc oxide(a-IGZO) thin film trans