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采用射频磁控溅射技术和复合靶材的方法,在p型单晶Si衬底上制备SiC薄膜及Co掺杂SiC薄膜。在真空度为1.0×10-4Pa、温度为1 200℃条件下,保温1 h进行晶化处理。通过X射线衍射(XRD)、X射线能量色散谱(EDX)、霍尔测量和紫外激光器等对薄膜的晶体结构、Co掺杂浓度、载流子浓度、导电类型及光敏特性等进行测试。结果表明,SiC薄膜为6H型晶体结构,Co掺杂后SiC薄膜的导电类型由n型转变为p型,载流子浓度比未掺杂的高2个数量级,对紫外光灵敏度是未掺杂的2倍,光照响应时间比未掺杂的缩短1/3。
SiC films and Co-doped SiC films were fabricated on p-type single-crystal Si substrate by RF magnetron sputtering and composite target method. In the vacuum degree of 1.0 × 10-4Pa, temperature of 1 200 ℃ conditions, holding 1 h crystallization. The crystal structure, Co doping concentration, carrier concentration, conductivity type and photosensitive property of the films were tested by X-ray diffraction (XRD), X-ray energy dispersive spectroscopy (EDX), Hall measurement and UV laser. The results show that the SiC film has a 6H crystal structure. The conductivity type of the SiC film changes from n-type to p-type after Co doping, and the carrier concentration is two orders of magnitude higher than the undoped one. The sensitivity to UV light is not doped Of the 2 times, light response time shorter than undoped 1/3.