基于氧等离子体活化的硅硅直接键合是一种新型的低温直接键合技术。为了优化工艺参数,得到高质量的键合硅片,选用正交试验法,研究了氧等离子体活化时间、活化功率、氧气流量三个重要的工艺参数对键合的影响,并采用键合率评估键合质量。研究结果表明,活化功率对键合率的影响最大,氧气流量次之,活化时间对结果影响最小,据此结论,在上述工艺中需重点关注活化功率和氧气流量的参数选择。 Silicon-silicon direct bonding based on oxygen plasma activation is a new type of low temperature direct bonding technology. In order to optimize the process parameters, high-quality bonded silicon wafers were obtained. The effects of oxygen plasma activation time, activation power and oxygen flow on bonding were studied by orthogonal test. The bonding rate Evaluate the bond quality. The results show that the activation power has the greatest effect on the bonding rate, the second is the oxygen flow, and the activation time has the least effect on the results. Therefore, we should pay more attention to the parameter selection of activation power and oxygen flow in the above process.