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系统地研究了随着GaSb薄膜生长温度的降低,Sb/Ga(V/III)比的变化对薄膜低缺陷表面质量的影响.为了获得良好表面形貌的GaSb外延层,生长温度与V/III比均需要同时降低.当Sb源裂解温度为900℃时,生长得到低缺陷表面的低温GaS b薄膜的最佳生长条件是生长温度为在再构温度的基础上加60℃且V/III比为7.1.
The effect of Sb / Ga (V / III) ratio on the surface quality of low defect films was investigated systematically with the decrease of the growth temperature of GaSb films.In order to obtain GaSb epitaxial films with good surface morphology, the relationship between the growth temperature and V / Is lower than that at the same time.When the Sb source cracking temperature is 900 ℃, the optimal growth conditions for the low-temperature GaS b thin film grown on the low defect surface are that the growth temperature is 60 ℃ and the V / III ratio 7.1.