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用常压ＭＯＣＶＤ在半绝缘ＧａＡｓ衬底上生长了Ｇａ＿ｘＩｎ＿（１－ｘ）Ｐ（ｘ＝０．４７６～０．５２）外延层，对外延层进行了Ｘ光双晶衍射、Ｈａｌｌ和光致发光（ＰＬ）测试。７７Ｋ下电子迁移率达３３００ｃｍ￣２／Ｖ．ｓ（浓度为１．４×１０￣（１６）ｃｍ￣（－３））。载流子浓度随生长温度升高，随Ⅴ／Ⅲ比的增大而降低，并提出Ｐ空位（Ｖｐ）是自由载流子的一个重要来源，１７ＫＰＬ谱中，Ｇａ＿（０．５）Ｉｎ＿（０．５）Ｐ（Ｔｇ＝６５０℃，Ⅴ／Ⅲ＝７０）的峰能为１．８２８ｅＶ，半峰宽为１９ｍｅＶ。另外，在１．８４９ｅＶ处还有一较弱的峰，ＧａＩｎＰ峰能和其计算的带隙最大相差１１３ｍｅＶ，这可能与ＧａＩｎＰ中杂质或缺陷以及其中存在有序结构有关。
The epitaxial layer of Ga_xIn_ (1-x) P (x = 0.476 ~ 0.52) was grown on semi-insulating GaAs substrate by atmospheric pressure MOCVD. The epitaxial layer was subjected to X-ray double crystal diffraction, Hall and photoluminescence PL) test. 77K under the electron mobility of 3300cm ~ 2 / V. s (the concentration of 1.4 × 10 ~ (16) cm ~ (-3)). The carrier concentration decreases with the increase of Ⅴ / Ⅲ ratio as the growth temperature increases. It is also suggested that P vacancy (Vp) is an important source of free carriers. In the 17KPL spectrum, Ga_ (0.5) In_ ( 0.5) P (Tg = 650 ° C, V / III = 70) has a peak energy of 1.828 eV and a full width at half maximum of 19 meV. In addition, there is a weaker peak at 1.849 eV. The GaInP peak can differ by a maximum of 113 meV from its calculated band gap, which may be related to the impurities or defects in GaInP and the ordered structure in GaInP.