美国休斯研究实验室首次在采用离子注入作为掺杂技术制作的砷化镓二极管上获得激光作用。该实验室研究人员把这一进展视为在半导体单片上将集成光电路和激光光源相结合的一个步骤。为了实现这一目标,他们认为必须把激光光源的光耦合到光集成电路的窄波导中。用离子注入技术制作的激光器的非常浅的结特别适用于这个方面。 For the first time, Hughes Research Laboratories in the U.S. obtained laser effects on gallium arsenide diodes fabricated using ion implantation as a doping technique. The lab researchers see this progress as a step in integrating the integrated optoelectronic circuit with a laser light source on a single semiconductor chip. In order to achieve this goal, they believe it is necessary to couple the light from the laser source into the narrow waveguide of the optical integrated circuit. Very shallow junctions made of lasers using ion implantation techniques are particularly suitable for this purpose.