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本文介绍了一种使用Ｘ射线宽角测角仪和双晶测角仪相配合的检测半导体异质外延薄膜的方法．其特点是快速且不损伤样品，特别适合大失配度的外延生长的条件试验检测，也可用于器件生产过程中的外延质量的监控．此法还可用于各种超晶格结构参数的测量．
This paper presents a method of detecting a semiconductor heteroepitaxial film using a combination of a wide angle goniometer and a twin crystal goniometer. It is characterized by fast and without damage to the sample, especially suitable for the test conditions of the epitaxial growth with large mismatch degree. It can also be used for the monitoring of the epitaxial quality in the device manufacturing process. This method can also be used for the measurement of various superlattice structure parameters.