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We show the modulation instability of broad optical beams in biased photorefractive-photovoltaic crystals under steady-state conditions. This modulation instability growth rate depends on the exteal bias field, the bulk photovoltaic effect, and the ratio of the optical beam intensity to that of the dark irradiance. Under appropriate conditions, this modulation instability growth rate is the modulation instability growth rate studied previously in biased photorefractive-nonphotovoltaic crystals, and the modulation instability growth rate in open- and closed-circuit photorefractive-photovoltaic crystals can be predicted.