随着便携式电子产品的不断推出,低功耗电路设计已成为一种趋势,而将MOS管偏置在弱反型区是模拟电路低功耗设计的主要方法。本文研究了电路偏置在弱反型区时器件噪声和失调产生的影响,并且提出了改善电路噪声和失调特性的方案。 With the continuous introduction of portable electronic products, low-power circuit design has become a trend, and MOS transistor bias in the weak inversion region is the main method of low-power analog circuit design. This paper studies the effects of device bias and noise on the circuit in a weak inversion region and proposes a scheme to improve the noise and offset characteristics of the circuit.