【摘 要】
：
GeTe4 films are deposited by using a dc magnetron sputtering technique,and its structural,thermal and electrical properties are investigated systematically.The
【机 构】
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National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Na
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GeTe4 films are deposited by using a dc magnetron sputtering technique,and its structural,thermal and electrical properties are investigated systematically.The prototypical phase-change memory cells are fabricated by using a focused ion beam and magnetron sputtering techniques.Compared with Ge2Sb2Te5,the GeTe4 film exhibits a higher crystallization temperature (235℃),better data retention of ten years at 129℃,and larger activation energy (2.94 eV).GeTe4 phase change memory cells with an effective diameter of 1 μm show proper switching speed,low power consumption,and good resistance contrast.The Set and Reset operations are achieved by using a 200-ns 2.0-V pulse and a 30-ns 3.0-V pulse,respectively.The dynamic switching ratio between the OFF and ON states is larger than 1 × 104.
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