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Low pressure metalorganic chemical vapour deposition(LP-MOCVD) growth and characteristics of InAsSb on(100) GaSb substrates are investigated.Mirror-like surfaces with a minimum lattice mismatch are obtained.The samples are studied by photoluminescence spectra,and the output is 3.17 μm in wavelength.The surface of InAsSb epilayer shows that its morphological feature is dependent on buffer layer.With an InAs buffer layer used,the best surface is obtained.The InAsSb film shows to be of n-type conduction with an electron concentration of 8.52×1016 cm 3.
Low pressure metalorganic chemical vapor deposition (LP-MOCVD) growth and characteristics of InAsSb on (100) GaSb substrates are investigated. Mirror-like surfaces with a minimum lattice mismatch are. The samples were studied by photoluminescence spectra, and the output is 3.17 μm in wavelength. The surface of InAsSb epilayer shows that its morphological feature is dependent on the buffer layer .With an InAs buffer layer used, the best surface is obtained. The InAsSb film shows to be n-type conduction with an electron concentration of 8.52 × 1016 cm 3.