本研究中研制的等离子淀积装置,通过在低气压(10~(-4)Torr)下增强等离子体的激发效率及中能(10—20eV)离子的加速作用,采用微波ECR(电子回旋共振)激活等离子体以及用发散磁场的方法把等离子体流引到样品台等措施,可以淀积出致密、高质量的Si_3N_4及SiO_2等薄膜。而且不需加热衬底。通过测量薄膜在缓冲的HF溶液中的腐蚀速率来鉴定这些薄膜的质量。本方法淀积的Si_3N_4及SiO_2薄膜比得上用高温CVD及热氧化方法制备的相应薄膜。 The plasma deposition apparatus developed in this study is based on microwave ECR (Electron Cyclotron Resonance) by enhancing the plasma excitation efficiency and the accelerating effect of medium (10-20eV) ions at low pressure (10 ~ (-4) Torr) ) Activation of the plasma and the use of a divergent magnetic field to direct the plasma flow to the sample stage and other measures can be deposited dense, high-quality Si_3N_4 and SiO_2 and other films. And without heating the substrate. The quality of these films was identified by measuring the corrosion rate of the films in buffered HF solution. The Si_3N_4 and SiO_2 films deposited by the method are comparable to the corresponding films prepared by the high temperature CVD and thermal oxidation methods.