【摘 要】
：
Kesterite Cu2ZnSn(S,Se)4 (CZTSSe) solar cells have drawn worldwide attention for their promising photovoltaics performance and earth-abundant element composition,yet the record efficiency of this type of device is still far lower than its theoretical conv
【机 构】
：
Center for Advanced Optoelectronic Functional Materials Research, and Key Laboratory of UV-Emitting
论文部分内容阅读
Kesterite Cu2ZnSn(S,Se)4 (CZTSSe) solar cells have drawn worldwide attention for their promising photovoltaics performance and earth-abundant element composition,yet the record efficiency of this type of device is still far lower than its theoretical conversion efficiency.Undesirable band alignment and severe non-radiative recombination at CZTSSe/CdS heterojunction interfaces are the major causes limiting the current/voltage output and overall device performance.Herein,we propose a novel two-step CdS deposition strategy to improve the quality of CZTSSe/CdS heterojunction interface and thereby improve the performance of CZTSSe solar cell.The two-step strategy includes firstly pre-deposits CdS thin layer on CZTSSe absorber layer by chemical bath deposition (CBD),followed with a mild heat treatment to facilitate element inter-diffusion,and secondly deposits an appropriate thickness of CdS layer by CBD to cover the whole surface of pre-deposited CdS and CZTSSe layers.The solar energy conversion efficiency of CZTSSe solar cells with two-step deposited CdS layer approaches to 8.76％ (with an active area of about 0.19 cm2),which shows an encouraging improvement of over 87.98％ or 30.16％ compared to the devices with traditional CBD-deposited CdS layer without and with the mild annealing process,respectively.The performance enhancement by the two-step CdS deposition is attributed to the formation of more favorable band alignment at CZTSSe/CdS interface as well as the effective decrease in interracial recombination paths on the basis of material and device characterizations.The two-step CdS deposition strategy is simple but effective,and should have large room to improve the quality of CZTSSe/CdS heterojunction interface and further lift up the conversion efficiency of CZTSSe solar cells.
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