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目的：探讨事件相关电位内源性成分在不同刺激模式下的任务负荷效应．方法：采用视觉同时呈现性短时记忆模式诱发并记录了１８名健康大学生在完成数字记忆集２和５任务时的Ｎ２波及Ｐ３波．结果：缺失刺激模式下，随任务负荷增加．Ｎ２波及Ｐ３波潜伏期延长，波幅下降；现实刺激模式下，除Ｎ２波波幅上升外，各指标变化同前．结论：现实刺激模式下．Ｎ２波与Ｐ３波以复合体形式出现，二者具有同样的任务负荷效应；缺失刺激模式下，Ｎ２波与Ｐ３波独立存在，Ｐ３波表现为同前的任务负荷效应，Ｎ２波负荷效应仍需进一步探讨．
Objective: To investigate the task load effects of endogenous components of event-related potentials under different stimulation modes. Methods: Simultaneous visual short-term memory was used to induce and record the N2 wave and P3 wave of 18 healthy college students in completing the tasks 2 and 5 of digital memory. Results: Missing stimulus mode increases with task load. N2 and P3 wave latency prolonged, amplitude decreased; realistic stimulus mode, in addition to the amplitude of the rise of the N2 wave, the change of the same indicators. Conclusion: realistic stimulus mode. N2 wave and P3 wave appear in the form of complex, and both have the same task loading effect. In the absence of stimulus mode, N2 wave and P3 wave exist independently, P3 wave behaves the same task load effect as the previous one, and N2 wave load effect still needs Further Discussion.