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为了改善器件的响应均匀性,通过优化台面制作与SiNx钝化工艺制备了高均匀性256元线列正照射InGaAs探测器,实现了该探测器与读出电路的互连,测试了器件的I-V特性、光谱响应、信号和噪声,并利用激光感生电流技术研究了探测器的串音和光敏感区的扩大问题。测试结果表明:在-0.5V偏压下,探测器的暗电流典型值约为0.9nA,平均峰值探测率为7.8×1011cm·Hz1/2·W-1,响应的不均匀性为4.8%。LBIC测试结果表明:光敏元区没有扩大,光敏元之间串音较小,并成功实现了室温扫描成像,图像比较清晰。
In order to improve the response uniformity of the devices, a 256-nm line-array positive-emitting InGaAs detector was fabricated by optimizing the mesa production and SiNx passivation process. The detector and the readout circuit were interconnected. The IV Characteristics, spectral response, signal and noise. The laser induced current technique is used to study the crosstalk of detectors and the enlargement of light sensitive area. The results show that the typical dark current of the detector is about 0.9nA at a bias voltage of -0.5V, the average peak detection rate is 7.8 × 1011cm · Hz1 / 2 · W-1, and the response inhomogeneity is 4.8%. LBIC test results show that: the photosensitive element area is not expanded, the crosstalk between the photosensitive elements is small, and the successful realization of the room temperature scanning imaging, the image is relatively clear.